Fabricating a magnetic tunnel junction storage element
US8981502B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2010 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | May 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
Abstract
Methods for forming a magnetic tunnel junction (MTJ) storage element and MTJ storage elements formed are disclosed. The MTJ storage element includes a MTJ stack having a pinned layer stack, a barrier layer and a free layer. An adjusting layer is formed on the free layer, such that the free layer is protected from process related damages. A top electrode is formed on the adjusting layer and the adjusting layer and the free layer are etched utilizing the top electrode as a mask. A spacer layer is then formed, encapsulating the top electrode, the adjusting layer and the free layer. The spacer layer and the remaining portions of the MTJ stack are etched. A protective covering layer is deposited over the spacer layer and the MTJ stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.