Magnetoresistive effect element and manufacturing method thereof
US8982614B2 · kind B2 · utility
2Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Aug 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier provided on the first ferromagnetic layer, and a second ferromagnetic layer provided on the tunnel barrier. The tunnel barrier includes a nonmagnetic mixture containing MgO and a metal oxide with a composition which forms, in a solid phase, a single phase with MgO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.