Free form fracturing method for electronic or optical lithography
US8984451B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Feb 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31776
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention discloses a computer implemented method of fracturing a surface into elementary features wherein the desired pattern has a rectilinear or curvilinear form. Depending upon the desired pattern, a first fracturing will be performed of a non-overlapping or an overlapping type. If the desired pattern is resolution critical, it will be advantageous to perform a second fracturing step using eRIFs. These eRIFs will be positioned either on the edges or on the medial axis or skeleton of the desired pattern. The invention further discloses method steps to define the position and shape of the elementary features used for the first and second fracturing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.