ASELTA NANOGRAPHICS
16Patents
16Active
16Granted
47Portfolio score
Filing activity: Aug 16, 2012 → Oct 5, 2016
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10534255B2 | Method of applying vertex based corrections to a semiconductor design | Physics | 5 | Active |
| US9922159B2 | Free form fracturing method for electronic or optical lithography | Electricity | 3 | Active |
| US9223926B2 | Method for correcting electronic proximity effects using the deconvolution of the pattern to be exposed by means of a probabilistic method | Electricity | 3 | Active |
| US10295912B2 | Method for determining the parameters of an IC manufacturing process model | Electricity | 2 | Active |
| US10156796B2 | Method for determining the parameters of an IC manufacturing process by a differential procedure | Physics | 1 | Active |
| US10578978B2 | Method for determining the dose corrections to be applied to an IC manufacturing process by a matching procedure | Physics | 1 | Active |
| US8984451B2 | Free form fracturing method for electronic or optical lithography | Electricity | 1 | Active |
| US9224577B2 | Method for correcting electronic proximity effects using off-center scattering functions | Electricity | 1 | Active |
| US10157728B2 | Lithography method with combined optimization of the radiated energy and of the geometry applicable to complex shapes | Electricity | 1 | Active |
| US9542505B2 | Method and system for preparing a pattern to be printed on a plate or mask by electron beam lithography | Electricity | 0 | Active |
| US9891519B2 | Free form fracturing method for electronic or optical lithography using resist threshold control | Electricity | 0 | Active |
| US9934336B2 | Method of correcting electron proximity effects using Voigt type scattering functions | Electricity | 0 | Active |
| US10522328B2 | Method of performing dose modulation, in particular for electron beam lithography | Electricity | 0 | Active |
| US9430597B2 | Method for estimating patterns to be printed on a plate or mask by means of electron-beam lithography and corresponding printing device | Electricity | 0 | Active |
| US10553394B2 | Method for the correction of electron proximity effects | Electricity | 0 | Active |
| US10423074B2 | Method for calculating the metrics of an IC manufacturing process | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.