Group III nitride semiconductor device, production method therefor, and power converter
US8987077B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 27, 2013 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Aug 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor device, includes forming a first carrier transport layer including a Group III nitride semiconductor, forming a mask on a region of the first carrier transport layer, selectively re-growing a second carrier transport layer on an unmasked region of the first carrier transport layer, the second carrier transport layer including a Group III nitride semiconductor, and selectively growing a carrier supply layer on the second carrier transport layer, the carrier supply layer including a Group III nitride semiconductor having a bandgap different from that of the Group III nitride semiconductor of the second carrier transport layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.