Epitaxial growth of silicon for layer transfer
US8987115B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2008 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Jul 28, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.