Method of fabricating semiconductor device
US8987118B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2013 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Sep 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a semiconductor device is disclosed comprising the steps of: providing a substrate having a first region, a second region and a plurality of gate electrodes which are formed on the first and second regions of the substrate; forming a mask film to expose the first region of the substrate while covering the second region of the substrate, such that the mask film has a negative lateral profile at a boundary between the first and second regions of the substrate; forming sigma trenches in the first region of the substrate by etching the first region of the substrate using the mask film and the gate electrodes as a mask; and forming an epitaxial layer in each of the sigma trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.