Pillar devices and methods of making thereof

US8987119B2 · kind B2 · utility

Assignee

• SanDisk 3D LLC · US

Inventors

• Vance Dunton · San Jose, US
• S. Brad Herner · San Jose, US
• Paul Wai Kie Poon · Fremont, US
• Chuanbin Pan · Sunnyvale, US
• Michael Chan · Mountain View, US
• Michael Konevecki · San Jose, US
• Usha Raghuram · Saratoga, US

Key dates

• Filing date: Feb 14, 2011
• Grant date: Mar 24, 2015
• Expiry date: Dec 6, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D48/381

Abstract

A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.