Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium
US8987146B2 · kind B2 · utility
5Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2013 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | May 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6715
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a raw material gas to a substrate in a process chamber, exhausting the raw material gas remaining in the process chamber through an exhaust line, supplying an amine-based gas; and exhausting the amine-based gas through the exhaust line with the supply of the amine-based gas stopped. A degree of valve opening of an exhaust valve disposed in the exhaust line is changed in multiple steps in the process of exhausting the amine-based gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.