High-energy ion implanter
US8987690B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2014 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | May 27, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K1/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.