Patent · US Active

Semiconductor structure and method for manufacturing the same

US8987787B2 · kind B2 · utility

2Cited by
18References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 10, 2012
Grant dateMar 24, 2015
Priority date
Expiry dateApr 10, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/00
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor structure includes first and second chips assembled to each other. The first chip includes N of first conductive lines, M of second conductive lines disposed on the first conductive lines, N of third conductive lines perpendicularly on the second conductive lines and parallel to the first conductive lines, N of first vias connected to the first conductive lines, M sets of second vias connected to the second conductive lines, and N sets of third vias connected to the third conductive lines. The second and first conductive lines form an overlapping area. The third conductive lines and N sets of the third vias include at least two groups respectively disposed in a first and a third regions of the overlapping area. M sets of second vias include at least two groups respectively disposed in a second region and a fourth region of the overlapping area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.