Semiconductor devices including a vertical channel transistor and methods of fabricating the same
US8987811B2 · kind B2 · utility
8Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2012 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Mar 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
Abstract
According to example embodiments, a semiconductor device includes a plurality of active pillars protruding from a substrate. Each active pillar includes a channel region between upper and lower doped regions. A contact gate electrode faces the channel region and is connected to a word line. The word line extends in a first direction. A bit line is connected to the lower doped region and extends in a second direction. The semiconductor device further includes a string body connection portion that connects the channel region of at least two adjacent active pillars of the plurality of active pillars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.