High voltage metal-oxide-semiconductor transistor device
US8987813B2 · kind B2 · utility
2Cited by
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20Claims
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Key dates
| Filing date | Aug 10, 2012 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Dec 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
A high voltage metal-oxide-semiconductor transistor device includes a substrate, at least an isolation structure formed in the substrate, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective sides of the gate. The isolation structure further includes a recess. The gate includes a first gate portion formed on a surface of the substrate and a second gate portion downwardly extending from the first gate portion and formed in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.