FinFET with a buried semiconductor material between two fins

US8987835B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Georgios Vellianitis · Heverlee, BE
• Mark van Dal · Linden, BE
• Blandine Duriez · Brussels, BE
• Richard Kenneth Oxland · Brussels, BE

Key dates

• Filing date: Mar 27, 2012
• Grant date: Mar 24, 2015
• Expiry date: Apr 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A fin structure for a fin field effect transistor (FinFET) device is provided. The device includes a substrate, a first semiconductor material disposed on the substrate, a shallow trench isolation (STI) region disposed over the substrate and formed on opposing sides of the first semiconductor material, and a second semiconductor material forming a first fin and a second fin disposed on the STI region, the first fin spaced apart from the second fin by a width of the first semiconductor material. The fin structure may be used to generate the FinFET device by forming a gate layer formed over the first fin, a top surface of the first semiconductor material disposed between the first and second fins, and the second fin.