Structure and method for narrowing voltage threshold distribution in non-volatile memories
US8988940B2 · kind B2 · utility
1Cited by
8References
7Claims
0Family size
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Key dates
| Filing date | Jul 31, 2012 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Mar 22, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/4402
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a memory array of macro cells. Each macro cell comprises a storage element and a calibration element. The storage element and its corresponding calibration element are part of a common memory array within an integrated circuit, and therefore, are in close proximity to each other. The calibration element may store a parameter used to modify the threshold voltage of the storage element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.