Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materials
US8992684B1 · kind B1 · utility
5Cited by
22References
10Claims
0Family size
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Key dates
| Filing date | Jun 14, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jul 21, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/403
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The geometry of transition from cylindrical to rectangular shape through the conical part in hydride vapor phase epitaxial (HVPE) systems for deposition of III-nitride films is disclosed. It is used to ensure the laminar gas flow inside the growth zone of the system. For the velocity of flow within the atmospheric pressure reactor to be sufficient, the precursors are injected through the narrow diameter tubing injectors. The quartz reactor geometry is introduced to control the transition from jet to laminar flow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.