Halogenated organoaminosilane precursors and methods for depositing films comprising same
US8993072B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2012 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Dec 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I:XmR1nHpSi(NR2R3)4-m-n-p Iwherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.