Block co-polymer photoresist
US8993221B2 · kind B2 · utility
2Cited by
16References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Feb 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/01
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processed to cleave at least some block copolymer bonds in the exposed selected regions. The exposed pinning layer is processed to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.