Plasma processing method and plasma processing apparatus
US8993352B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Nov 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32724
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing method is used to etch a multilayered material having a stacked structure, in which a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material are stacked in sequence, in a plasma processing apparatus including a processing chamber that partitions a processing space where plasma is generated and a gas supply unit that supplies a processing gas into the processing space. The plasma processing method includes a mask forming process of forming a mask on the second magnetic layer by etching the mask material; an etching process of supplying the processing gas into the processing chamber to generate plasma, etching the second magnetic layer by the mask, and stopping the etching on a surface of the insulating layer. Further, the second magnetic layer contains CoFeB, the insulating layer contains MgO, and the processing gas contains H2 and F or a fluorine compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.