Manufacturing method for edge illuminated type photodiode and semiconductor wafer
US8993361B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Aug 28, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.