Patent · US Active

Method for producing a semiconductor component

US8993372B2 · kind B2 · utility

0Cited by

4References

22Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Manfred Schneegans · Vaterstetten, DE
Carsten Ahrens · Birkenfeld, DE
Adolf Koller · Regensburg, DE
Gerald Lackner · Arnoldstein, AT
Anton Mauder · Kolbermoor, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Feb 28, 2012
Grant date	Mar 31, 2015
Priority date	—
Expiry date	Feb 28, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/218
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×108 W/cm2.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.