Patent · US Active

Method of fabricating bump structure

US8993431B2 · kind B2 · utility

4Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 12, 2010
Grant dateMar 31, 2015
Priority date
Expiry dateFeb 6, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19041
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for fabricating bump structure forms an under-bump metallurgy (UBM) layer in an opening of an encapsulating layer, and then forms a bump layer on the UBM layer within the opening of the encapsulating layer. After removing excess material of the bump layer from the upper surface of the encapsulating layer, the encapsulating layer is removed till a top portion of the bump layer protrudes from the upper surface of the encapsulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.