Low-k Cu barriers in damascene interconnect structures
US8993435B2 · kind B2 · utility
2Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2010 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jan 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the formation of an interconnect structure, a metal feature is formed in a dielectric layer. An etch stop layer (ESL) is formed over the metal feature and the dielectric layer using a precursor and a carbon-source gas including carbon as precursors. The carbon-source gas is free from carbon dioxide (CO2). The precursor is selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS), 3-methylsilane (3MS), 4-methylsilane (4MS), and combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.