Method to reduce dielectric constant of a porous low-k film
US8993444B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jun 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si—OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.