Patent · US Active

Method of forming a material layer in a semiconductor structure

US8993459B2 · kind B2 · utility

1Cited by

4References

17Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Carsten Grass · Dresden, DE
Martin Trentzsch · Dresden, DE
Boris Bayha · Dresden, DE
Peter Krottenthaler · Burghausen, DE

Key dates

Filing date	Aug 31, 2012
Grant date	Mar 31, 2015
Priority date	—
Expiry date	Sep 15, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/691
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method comprises depositing a first portion of a first material layer on a semiconductor structure. A first run of a post-treatment process is performed for modifying at least the first portion of the first material layer. After the first run of the post-treatment process, a second portion of the first material layer is deposited. The second portion is formed of substantially the same material as the first portion. After the deposition of the second portion of the first material layer, a second run of the post-treatment process is performed for modifying at least the second portion of the first material layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.