Light emitting device having MgO pyramid structure and method for fabricating the same
US8993997B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 23, 2011 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jun 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
A gallium nitride-based group III-V compound semiconductor light emitting device and a method for fabricating the same are provided. The gallium nitride-based group III-V compound semiconductor light emitting device includes: a substrate; a p-type ohmic electrode layer formed on the substrate; a p-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type ohmic electrode layer; an n-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type gallium nitride-based group III-V compound semiconductor layer; an n-type ohmic electrode layer formed on the n-type gallium nitride-based group III-V compound semiconductor layer; and first and second refractive index adjustment layers having refractive index smaller than those of the n-type gallium nitride-based group III-V compound semiconductor layer and the n-type ohmic electrode layer, wherein a pyramid structure is formed on the surface of the second refractive index adjustment layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.