Both carriers controlled thyristor
US8994067B2 · kind B2 · utility
0Cited by
4References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 27, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Sep 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/148
Abstract
The present invention relates to a technique of semiconductor devices, and provides a semiconductor device, which uses two controllable current sources to control the electron current and the hole current of the voltage-sustaining region of a thyristor under conduction state, making the sum of the two currents from anode to cathode close to a saturated value under high voltage, thus avoiding the current crowding effect in local region and increasing the reliability of the device. Besides, it further provides a method of implementing the two current sources in the device and a method to improve the switching speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.