Semiconductor device and method for manufacturing the same
US8994087B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jan 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to one embodiment, a semiconductor device includes a substrate and a first transistor. The substrate has a major surface. The first transistor is provided on the major surface. The first transistor includes a first stacked body, first and second conductive sections, a first gate electrode, and a first gate insulating film. The first stacked body includes first semiconductor layers and first insulating layers alternately stacked. The first semiconductor layers have a side surface. The first conductive section is electrically connected to one of the first semiconductor layers. The second conductive section is apart from the first conductive section and electrically connected to the one of the first semiconductor layers. The first gate electrode is provided between the first and second conductive sections and opposed to the side surface. The first gate insulating film is provided between the first gate electrode and the first semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.