Nonvolatile semiconductor storage device and method of manufacturing the same
US8994090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Sep 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A nonvolatile semiconductor storage device including a memory cell region including a memory cell having a charge storing layer above a gate insulating film and a control electrode above the charge storing layer via an interelectrode insulating film; and a peripheral circuit region including a peripheral element having a first polysilicon and a first insulating film above the first polysilicon; wherein the charge storing layer includes a polysilicon doped with P-type impurity including a first upper region contacting the interelectrode insulating film and having a first doped layer doped with carbon or nitrogen, and at least a portion of a region below the first doped layer is neither doped with carbon nor nitrogen, and wherein the first polysilicon includes a second upper region contacting the first insulating film and having a second doped layer doped with carbon or nitrogen, the first and the second doped layers having equal thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.