Semiconductor memory device with a buried drain and its memory array

US8994095B2 · kind B2 · utility

Assignee

• FUDAN UNIVERSITY · CN

Inventors

• Pengfei Wang · Shanghai, CN
• Qingqing Sun · Shanghai, CN
• Shijin Ding · Shanghai, CN
• Wei Zhang · Nanjing, CN

Key dates

• Filing date: Dec 24, 2010
• Grant date: Mar 31, 2015
• Expiry date: Dec 24, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/30

Abstract

A semiconductor memory device with a buried drain is provided. The device comprises a semiconductor substrate (107); one drain region (108) of a first doping type; two source regions (101a, 101b) of a second doping type; and a stacked gate provided on the semiconductor substrate for capturing electrons. A memory array formed by a plurality of semiconductor memory devices and a manufacturing method thereof are also provided. The semiconductor memory device has the advantages of small cell area, simple manufacturing process and the like. The manufacturing cost of the memory device is reduced and the storing density of the memory device is increased.