Semiconductor devices comprising getter layers and methods of making and using the same
US8994118B2 · kind B2 · utility
1Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2014 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | May 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.