Metal shield for integrated circuits
US8994152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2012 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Mar 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal shield structure is provided for an integrated circuit (IC) having at least a first metal contact coupled to a fixed potential and a second metal contact. A first passivation layer is located between the first and second metal contacts and on a first portion of the first metal contact and a first portion of the second metal contact, leaving a second portion of the first metal contact and a second portion of the second metal contact uncovered by the first passivation layer. A metal shield layer is provided on the second portion of the first metal contact and on the first passivation layer, and a second passivation layer is formed on the metal shield layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.