Interconnect structure and method for forming the same
US8994178B2 · kind B2 · utility
2Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2012 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | May 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A interconnect structure includes a first etch stop layer over a substrate, a dielectric layer over the first etch stop layer, a conductor in the dielectric layer, and a second etch stop layer over the dielectric layer. The dielectric layer contains carbon and has a top portion and a bottom portion. A difference of C content in the top portion and the bottom portion is less than 2 at %. An oxygen content in a surface of the conductor is less than about 1 at %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.