Patent · US Active

Method for driving power semiconductor switches

US8994413B2 · kind B2 · utility

2Cited by

3References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Peter Kanschat · Soest, DE
Andre Arens · Reuthen, DE
Hartmut Jasberg · Ottobrunn, DE
Ulrich Michael Georg Schwarzer · Warstein, DE

Key dates

Filing date	Apr 26, 2013
Grant date	Mar 31, 2015
Priority date	—
Expiry date	Apr 26, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH03K17/168
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A method for driving a controllable power semiconductor switch, having a first input terminal and first and second output terminals coupled to a voltage supply and a load, the first and second output terminals providing an output of the power semiconductor switch, includes adjusting a gradient of switch-off edges of an output current and an output voltage of the power semiconductor switch by a voltage source arrangement coupled to the input terminal. A gradient of switch-on edges of an output current and an output voltage is adjusted by a controllable current source arrangement that is coupled to the input terminal and generates a gate drive current. The profile of the gate drive current from one switching operation to a subsequent switching operation, beginning at a rise in the output current and ending at a decrease in the output voltage, is varied at most within a predefined tolerance band.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.