Patent · US Active

Method of programming selection transistors for NAND flash memory

US8995192B2 · kind B2 · utility

4Cited by

0References

2Claims

0Family size

Assignee

PS4 Luxco S.a.r.l. · LU

Inventors

Osama Khouri · Milano, IT
Simone Bartoli · Pessano, IT

Key dates

Filing date	Mar 28, 2012
Grant date	Mar 31, 2015
Priority date	—
Expiry date	Jun 14, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG11C16/34
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Disclosed herein is a method that includes providing a non-volatile memory device which includes a plurality of cells, a plurality of selection transistors each having a gate and each coupled to associated one of the cells, and a selection line coupled in common to the gates of the selection transistors, applying a first program voltage to the selection line, and applying a second program voltage to the selection line when at least one of the selection transistors have not been shifted to a program condition.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.