Fast-reading NAND flash memory
US8995195B2 · kind B2 · utility
3Cited by
29References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jul 21, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a flash memory two or more pages in a plane are read in rapid succession by maintaining global word line voltages throughout multiple page reads, and by simultaneously transitioning the old selected word line from a discrimination voltage to a read voltage and transitioning the new selected word line from the read voltage to a discrimination voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.