Patent · US Active

Edge-emitting semiconductor laser diode and method for producing the same

US8995490B2 · kind B2 · utility

1Cited by

5References

19Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Alfred Lell · Maxhütte-Haidhof, DE
Christoph Nelz · Wiesent, DE
Christian Rumbolz · Lappersdorf, DE
Stefan Hartauer · Wolfsegg, DE

Key dates

Filing date	Sep 7, 2011
Grant date	Mar 31, 2015
Priority date	—
Expiry date	Dec 21, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/176
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer embeds the ridge waveguide such that a surface of the ridge waveguide and a surface of the planarization layer form a flat main surface. A method for producing such a semiconductor laser diode is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.