Laser ashing of polyimide for semiconductor manufacturing
US8999107B2 · kind B2 · utility
0Cited by
6References
14Claims
0Family size
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Key dates
| Filing date | Oct 31, 2011 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Nov 3, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1917
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for laser ashing of polyimide for a semiconductor manufacturing process using a structure, the structure comprising a supporting material attached to a semiconductor chip by a polyimide glue, includes releasing the supporting material from the polyimide glue, such that the polyimide glue remains on the semiconductor chip; and ashing the polyimide glue on the semiconductor chip using an ablating laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.