Patent · US Active

Method for manufacturing a device on a substrate

US8999187B2 · kind B2 · utility

0Cited by

2References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Sandra Obernhuber · Lappersdorf, DE
Christof Jalics · Aalen, DE
Joerg Adler · Meißen, DE
Uwe Hoeckele · Regensburg, DE
Walter Preis · Regensburg, DE
Reinhard Goellner · Regensburg, DE
Tanja Ippisch · Steinberg am See, DE
Patricia Nickut · Burghausen, DE

Key dates

Filing date	Nov 27, 2013
Grant date	Apr 7, 2015
Priority date	—
Expiry date	Nov 27, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH03H3/04
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a device on a substrate includes forming a layer structure on the substrate, forming an auxiliary layer on the layer structure, forming a planarization layer on the auxiliary layer and on the substrate, exposing the auxiliary layer by a chemical mechanical polishing process and removing at least partly the auxiliary layer to form a planar surface of the remaining auxiliary layer or of the layer structure and the planarization layer. The chemical mechanical polishing process has a first removal rate with respect to the planarization layer and a second removal rate with respect to the auxiliary layer and the first removal rate is greater than the second removal rate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.