Pattern forming method, chemical amplification resist composition and resist film
US8999621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2010 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Jan 14, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern forming method includes: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a crosslinking agent; and (D) a solvent, a negative chemical amplification resist composition used in the method, and a resist film formed from the negative chemical amplification resist composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.