Pattern forming method, chemical amplification resist composition and resist film
US8999622B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2012 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Dec 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/108
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern forming method, includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin capable of increasing a polarity of the resin (A) to decrease a solubility of the resin (A) for a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent, wherein the resin (A) has a structure in which a polar group is protected with a leaving group capable of decomposing and leaving by an action of an acid, and the leaving group contains a fluorine atom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.