Semiconductor device manufacturing method
US8999768B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2011 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Sep 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and its method of manufacture. In the method, a front surface element structure is formed on a front surface of a semiconductor wafer, for example an SiC wafer. Then, a supporting substrate is bonded to wafer's front surface through an adhesive. The wafer's rear surface is ground and polished to thin it, with the supporting substrate bonded to the wafer. Next a V groove passing through the SiC wafer and reaching the adhesive is formed in the wafer's rear surface, and the wafer is cut into individual chips. An electrode film is formed on the groove's side wall and the chip's rear surface and a Schottky junction is formed between a drift layer, which is the chip, and the film. Then, the film is annealed. A tape is attached to the wafer's rear surface which has been cut into the chips. Then, the supporting substrate peels off from the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.