Method of reducing contact resistance
US8999800B2 · kind B2 · utility
4Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2013 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Jun 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment a method of forming low contact resistance in a substrate includes forming a silicide layer on the substrate, the silicide layer and substrate defining an interface therebetween in a source/drain region, and performing a hot implant of a dopant species into the silicide layer while the substrate is at a substrate temperature greater than 150° C., where the hot implant is effective to generate an activated dopant layer containing the dopant species, and the activated dopant layer extends from the interface into the source/drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.