Fin formation by epitaxial deposition

US8999821B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Adam Brand · Palo Alto, US
• Bingxi Wood · Cupertino, US
• Errol Antonio C. Sanchez · Tracy, US
• Yihwan Kim · San Jose, US
• Yi-Chiau Huang · Fremont, US
• John Boland · Scotts Valley, US

Key dates

• Filing date: May 5, 2014
• Grant date: Apr 7, 2015
• Expiry date: May 5, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of forming a fin structure for a field effect transistor are described. The methods may include the operations of patterning a mandrel on a surface of a substrate, and depositing an epitaxial layer of high-mobility channel material over exposed surfaces of the patterned mandrel. The epitaxial layer leaves a gap between adjacent columns of the patterned mandrel, and a dielectric material may be deposited in the gap between the adjacent columns of the patterned mandrel. The methods may also include planarizing the epitaxial layer to form a planarized epitaxial layer and exposing the columns of the patterned mandrel, and etching at least a portion of the exposed columns of the patterned mandrel and the dielectric material to expose at least a portion of the planarized epitaxial layer that forms the fin structure.