Process for producing at least one silicon-based nanoelement in a silicon oxide section and process for the manufacture of a device employing the production process

US8999860B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Vincent Larrey · La Murette, FR
• Laurent Vandroux · Chambéry, FR
• Audrey Berthelot · Meylan, FR
• Marie-Helene Vaudaine · Seyssinet-Pariset, FR

Key dates

• Filing date: Dec 19, 2013
• Grant date: Apr 7, 2015
• Expiry date: Dec 19, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/83
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The process for the production of at least one silicon-based nanoelement (4), in particular a nanowire, comprises the following stages: providing a substrate comprising, at the surface, a first layer (1) comprising electrically doped silicon; forming, on the first layer (1), a second layer (2) based on silicon oxide with carbon atoms (3) dispersed in the said second layer (2); and exposing the first and second layers (1, 2) to an oxidizing atmosphere, so as to oxidize at least a first section (1a) of the first layer (1) at the interface of the said first layer (1) with the second layer (2) and to form the said at least one nanoelement (4) at the said first section (1a).