Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100)

US9000432B2 · kind B2 · utility

Assignee

• The University Of North Carolina At Charlotte · US

Inventors

• Raphael Tsu · Huntersville, US
• Wattaka Sitapura · Charlotte, US
• John R. Hudak · Bayville, US

Key dates

• Filing date: Jun 25, 2014
• Grant date: Apr 7, 2015
• Expiry date: Jun 25, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/647
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (Gd2O3(100)).