FinFET with multiple concentration percentages
US9000498B2 · kind B2 · utility
11Cited by
8References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 28, 2013 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Jun 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus of a semiconductor is provided wherein the apparatus comprises a substrate, a stack, and a fin. The substrate supports the stack and the substrate comprises a first material. The stack provides for the fin and the stack comprises: a strain induced in the stack via the substrate; the first material and a second material; and a plurality of concentrations of the second material with respect to the first material. The fin provides a source and a drain of a field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.