Quantum electro-optical device using CMOS transistor with reverse polarity drain implant
US9000505B2 · kind B2 · utility
6Cited by
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Key dates
| Filing date | Aug 26, 2011 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Sep 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A CMOS IC containing a quantum well electro-optical device (QWEOD) is disclosed. The QWEOD is formed in an NMOS transistor structure with a p-type drain region. The NLDD region abutting the p-type drain region forms a quantum well. The QWEOD may be fabricated with 65 nm technology node processes to have lateral dimensions less than 15 nm, enabling possible energy level separations above 50 meV. The quantum well electro-optical device may be operated in a negative conductance mode, in a photon emission mode or in a photo detection mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.