Fin field effect transistor having a highly doped region
US9000536B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2013 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Jun 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0241
Abstract
The present disclosure relates a Fin field effect transistor (FinFET) device having large effective oxide thickness that mitigates hot carrier injection, and an associated method of formation. In some embodiments, the FinFET device has a conductive channel of a first fin protruding from a planar substrate. The conductive channel has a non-conductive highly doped region located along multiple outer edges of the channel region. A gate region protrudes from the planar substrate as a second fin that overlies the first fin. A gate dielectric region is located between the non-conductive highly doped region and the gate region. The non-conductive highly doped region and the gate dielectric region collectively provide for an effective oxide thickness of the FinFET device that allow a low electric field across gate oxide and less hot carrier injection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.