Patent · US Active

Semiconductor device, method of cutting electrical fuse, and method of determining electrical fuse state

US9000559B2 · kind B2 · utility

3Cited by
3References
26Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 23, 2007
Grant dateApr 7, 2015
Priority date
Expiry dateNov 1, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor substrate and an electrical fuse formed on the semiconductor substrate, and including a first conductor and a second conductor electrically separated from the first conductor. In a state of the electrical fuse after a cutting processing, the first conductor is cut and separated into a first part electrically separated from the second conductor and a second part including a flowing region from which a material constituting the first conductor flows outward and which is electrically connected to the second conductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.